A single ended 6T SRAM cell design for ultra-low-voltage applications
نویسندگان
چکیده
منابع مشابه
A single ended 6T SRAM cell design for ultra-low-voltage applications
In this paper, we present a novel six-transistor (6T) single-ended static random access memory (SE-SRAM) cell for ultralow-voltage applications. The proposed design has a strong 2.65X worst case read static noise margin (SNM) compared to a standard 6T SRAM. A strong write-ability of logic ‘one’ is achieved, which is problematic in an SE-SRAM cell with a 36% improvement compared to standard 6T S...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2008
ISSN: 1349-2543
DOI: 10.1587/elex.5.750